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Toshiba Semiconductor and Storage CRH01(TE85R,Q,M)
DIODE GEN PURP 200V 1A SFLAT
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.14
- Stock
- 100
Product Details
- Current - Average Rectified (Io)
- 3A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - Forward (Vf) (Max) @ If
- 1.05V @ 3A
- Series
- -
- Diode Type
- Avalanche
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-214AA, SMB
- Capacitance @ Vr, F
- 40pF @ 4V, 1MHz
- Supplier Device Package
- DO-214AA (SMB)
- Current - Reverse Leakage @ Vr
- 20µA @ 600V
- Voltage - DC Reverse (Vr) (Max)
- 200V