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Toshiba Semiconductor and Storage GT10J312(Q)
IGBT 600V 10A 60W TO220SM
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- IGBT 600V 10A 60W TO220SM
Product Details
- Input Type
- Standard
- Reverse Recovery Time (trr)
- 2.5µs
- Part Status
- Obsolete
- Current - Collector (Ic) (Max)
- 60A
- Power - Max
- 170W
- Current - Collector Pulsed (Icm)
- 120A
- Mounting Type
- Through Hole
- Voltage - Collector Emitter Breakdown (Max)
- 1000V
- Package / Case
- TO-3PL
- Test Condition
- -
- Base Part Number
- GT60
- Switching Energy
- -
- Td (on/off) @ 25°C
- 330ns/700ns
- Series
- -
- Operating Temperature
- 150°C (TJ)
- IGBT Type
- -
- Supplier Device Package
- TO-3P(LH)
- Packaging
- Tube
- Vce(on) (Max) @ Vge, Ic
- 2.8V @ 15V, 60A