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Toshiba Semiconductor and Storage GT60N321(Q)
IGBT 1000V 60A 170W TO3P LH
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- IGBT 1000V 60A 170W TO3P LH
Product Details
- Package / Case
- 8-TSSOP (0.173", 4.40mm Width)
- Test Condition
- -
- Switching Energy
- -
- Td (on/off) @ 25°C
- 1.7µs/2µs
- Operating Temperature
- 150°C (TJ)
- Series
- -
- Supplier Device Package
- 8-TSSOP
- IGBT Type
- -
- Vce(on) (Max) @ Vge, Ic
- 2.9V @ 4V, 150A
- Packaging
- Tape & Reel (TR)
- Current - Collector Pulsed (Icm)
- 150A
- Input Type
- Standard
- Voltage - Collector Emitter Breakdown (Max)
- 400V
- Part Status
- Obsolete
- Power - Max
- 600mW
- Mounting Type
- Surface Mount