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Toshiba Semiconductor and Storage HN1C01FU-Y,LF
NPN + NPN IND. TRANSISTOR VCEO50
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.05
- Stock
- 0
Product Details
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 180 @ 2mA, 6V
- Power - Max
- 300mW
- Voltage - Collector Emitter Breakdown (Max)
- 120V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6
- Transistor Type
- 2 NPN (Dual)
- Base Part Number
- IMX8
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Frequency - Transition
- 140MHz
- Supplier Device Package
- SOT-26
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 1mA, 10mA
- Series
- -
- Current - Collector (Ic) (Max)
- 50mA
- Packaging
- Cut Tape (CT)
- Current - Collector Cutoff (Max)
- 500nA (ICBO)