Toshiba Semiconductor and Storage MT3S111(TE85L,F)

Product Details

Operating Temperature

150°C (TJ)

Frequency - Transition

8GHz

Supplier Device Package

P-SOT363-6

Gain

20dB

Noise Figure (dB Typ @ f)

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

Series

-

Current - Collector (Ic) (Max)

20mA

Packaging

Digi-Reel®

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 8V

Part Status

Active

Voltage - Collector Emitter Breakdown (Max)

12V

Power - Max

175mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Transistor Type

2 NPN (Dual)

Base Part Number

BFS481