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Toshiba Semiconductor and Storage MT3S111P(TE12L,F)
RF TRANS NPN 6V 8GHZ PW-MINI
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 7876
Product Details
- Part Status
- Active
- Power - Max
- 1W
- Mounting Type
- Through Hole
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Transistor Type
- PNP
- Operating Temperature
- -65°C ~ 200°C (TJ)
- Frequency - Transition
- 500MHz
- Supplier Device Package
- TO-39
- Noise Figure (dB Typ @ f)
- -
- Gain
- -
- Current - Collector (Ic) (Max)
- 400mA
- Series
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 10 @ 50mA, 5V
- Packaging
- Bulk
- Voltage - Collector Emitter Breakdown (Max)
- 40V