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Toshiba Semiconductor and Storage MT3S113(TE85L,F)

RF TRANS NPN 5.3V 12.5GHZ SMINI

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
5919

Product Details

Operating Temperature
150°C (TJ)
Frequency - Transition
600MHz
Supplier Device Package
TO-92-3
Gain
-
Noise Figure (dB Typ @ f)
3dB ~ 5dB @ 100MHz
Series
-
Current - Collector (Ic) (Max)
20mA
Packaging
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 6V
Part Status
Active
Voltage - Collector Emitter Breakdown (Max)
20V
Power - Max
250mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Transistor Type
NPN
Base Part Number
KSC1674