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Toshiba Semiconductor and Storage MT3S113P(TE12L,F)
RF TRANS NPN 5.3V 7.7GHZ PW-MINI
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 1821
Product Details
- Series
- -
- Current - Collector (Ic) (Max)
- 150mA
- Packaging
- Digi-Reel®
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 25 @ 100mA, 10V
- Part Status
- Not For New Designs
- Voltage - Collector Emitter Breakdown (Max)
- 18V
- Power - Max
- 1W
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Transistor Type
- NPN
- Base Part Number
- BFG35
- Operating Temperature
- 175°C (TJ)
- Frequency - Transition
- 4GHz
- Supplier Device Package
- SOT-223
- Gain
- -
- Noise Figure (dB Typ @ f)
- -