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Toshiba Semiconductor and Storage RN1108(T5L,F,T)

TRANS PREBIAS NPN 0.1W SSM

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

Resistor - Emitter Base (R2)
47 kOhms
Series
-
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Packaging
Cut Tape (CT)
Current - Collector (Ic) (Max)
100mA
Part Status
Discontinued at Digi-Key
Current - Collector Cutoff (Max)
500nA
Power - Max
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Mounting Type
Surface Mount
Voltage - Collector Emitter Breakdown (Max)
50V
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Base Part Number
RN140*
Resistor - Base (R1)
47 kOhms
Frequency - Transition
250MHz
Supplier Device Package
S-Mini