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Toshiba Semiconductor and Storage RN1109CT(TPL3)

TRANS PREBIAS NPN 0.05W CST3

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0.2
Stock
10000
Description
TRANS PREBIAS NPN 0.05W CST3

Product Details

Part Status
Obsolete
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
300mW
DC Current Gain (hFE) (Min) @ Ic, Vce
56 @ 5mA, 5V
Mounting Type
Through Hole
Voltage - Collector Emitter Breakdown (Max)
50V
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Type
NPN - Pre-Biased
Base Part Number
FJN3303
Resistor - Base (R1)
22 kOhms
Frequency - Transition
250MHz
Supplier Device Package
TO-92-3
Resistor - Emitter Base (R2)
22 kOhms
Series
-
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Packaging
Cut Tape (CT)
Current - Collector (Ic) (Max)
100mA