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Toshiba Semiconductor and Storage RN1131MFV(TL3,T)
TRANS PREBIAS NPN 0.15W VESM
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- TRANS PREBIAS NPN 0.15W VESM
Product Details
- Resistor - Base (R1)
- 100 kOhms
- Frequency - Transition
- 250MHz
- Supplier Device Package
- SOT-23-3
- Resistor - Emitter Base (R2)
- 100 kOhms
- Series
- -
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Packaging
- Digi-Reel®
- Current - Collector (Ic) (Max)
- 100mA
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 500nA
- Power - Max
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 82 @ 5mA, 5V
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Transistor Type
- NPN - Pre-Biased
- Base Part Number
- DDTC115