Toshiba Semiconductor and Storage RN1306,LF

Product Details

Frequency - Transition

200MHz

Supplier Device Package

SST3

Resistor - Emitter Base (R2)

10 kOhms

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Series

Automotive, AEC-Q101

Current - Collector (Ic) (Max)

500mA

Packaging

Cut Tape (CT)

Current - Collector Cutoff (Max)

-

Part Status

Active

DC Current Gain (hFE) (Min) @ Ic, Vce

56 @ 50mA, 5V

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Transistor Type

PNP - Pre-Biased + Diode

Resistor - Base (R1)

2.2 kOhms