Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage RN1316,LF
TRANS PREBIAS NPN 0.1W USM
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 3000
Product Details
- Transistor Type
- NPN - Pre-Biased
- Resistor - Base (R1)
- 4.7 kOhms
- Frequency - Transition
- 250MHz
- Supplier Device Package
- SST3
- Resistor - Emitter Base (R2)
- 10 kOhms
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA
- Series
- *
- Current - Collector (Ic) (Max)
- 100mA
- Packaging
- Digi-Reel®
- Current - Collector Cutoff (Max)
- 500nA
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 10mA, 5V
- Power - Max
- 200mW
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3