Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage RN1424TE85LF
TRANS PREBIAS NPN 200MW SMINI
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- TRANS PREBIAS NPN 200MW SMINI
Product Details
- Power - Max
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 90 @ 100mA, 1V
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Transistor Type
- NPN - Pre-Biased
- Base Part Number
- RN142*
- Resistor - Base (R1)
- 470 Ohms
- Frequency - Transition
- 300MHz
- Supplier Device Package
- S-Mini
- Resistor - Emitter Base (R2)
- 10 kOhms
- Series
- -
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 1mA, 50mA
- Packaging
- Tape & Reel (TR)
- Current - Collector (Ic) (Max)
- 800mA
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 500nA