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Toshiba Semiconductor and Storage RN1427TE85LF
TRANS PREBIAS NPN 200MW SMINI
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- TRANS PREBIAS NPN 200MW SMINI
Product Details
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 300µA, 10mA
- Series
- -
- Current - Collector (Ic) (Max)
- 80mA
- Packaging
- Tape & Reel (TR)
- Current - Collector Cutoff (Max)
- 500nA
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 35 @ 5mA, 10V
- Power - Max
- 100mW
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Mounting Type
- Surface Mount
- Package / Case
- SC-101, SOT-883
- Transistor Type
- NPN - Pre-Biased
- Resistor - Base (R1)
- 10 kOhms
- Frequency - Transition
- 150MHz
- Supplier Device Package
- ML3-N2
- Resistor - Emitter Base (R2)
- 10 kOhms