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Toshiba Semiconductor and Storage RN1908,LF(CT
NPNX2 BRT Q1BSR22KOHM Q1BER47KOH
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- NPNX2 BRT Q1BSR22KOHM Q1BER47KOH
Product Details
- Resistor - Base (R1)
- 4.7kOhms
- Frequency - Transition
- -
- Supplier Device Package
- SOT-666
- Resistor - Emitter Base (R2)
- 47kOhms
- Vce Saturation (Max) @ Ib, Ic
- 100mV @ 250µA, 5mA
- Series
- -
- Current - Collector (Ic) (Max)
- 100mA
- Packaging
- Tape & Reel (TR)
- Current - Collector Cutoff (Max)
- 1µA
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 10mA, 5V
- Power - Max
- 300mW
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Transistor Type
- 2 NPN - Pre-Biased (Dual)