Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage RN1908FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 3945
Product Details
- Series
- -
- Current - Collector (Ic) (Max)
- 100mA
- Packaging
- Cut Tape (CT)
- Current - Collector Cutoff (Max)
- 1µA
- Part Status
- Discontinued at Digi-Key
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 1mA, 5V
- Power - Max
- 300mW
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Resistor - Base (R1)
- 10kOhms
- Frequency - Transition
- -
- Supplier Device Package
- 6-TSSOP
- Resistor - Emitter Base (R2)
- -
- Vce Saturation (Max) @ Ib, Ic
- 150mV @ 500µA, 10mA