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Toshiba Semiconductor and Storage RN1910FE(T5L,F,T)
TRANS 2NPN PREBIAS 0.1W ES6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- TRANS 2NPN PREBIAS 0.1W ES6
Product Details
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- Base Part Number
- *MH10
- Resistor - Base (R1)
- 2.2kOhms
- Frequency - Transition
- 250MHz
- Supplier Device Package
- SMT6
- Resistor - Emitter Base (R2)
- 47kOhms
- Series
- -
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Packaging
- Digi-Reel®
- Current - Collector (Ic) (Max)
- 100mA
- Part Status
- Not For New Designs
- Current - Collector Cutoff (Max)
- 500nA
- Power - Max
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA, 5V
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- SC-74, SOT-457