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Toshiba Semiconductor and Storage RN2104MFV,L3F

TRANS PREBIAS PNP 50V 500NA VESM

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0.2
Stock
10000
Description
TRANS PREBIAS PNP 50V 500NA VESM

Product Details

Frequency - Transition
230MHz
Supplier Device Package
TO-236AB
Resistor - Emitter Base (R2)
10 kOhms
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector (Ic) (Max)
100mA
Series
Automotive, AEC-Q101
Current - Collector Cutoff (Max)
1µA
Part Status
Obsolete
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V
Power - Max
250mW
Voltage - Collector Emitter Breakdown (Max)
50V
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Resistor - Base (R1)
10 kOhms