Toshiba Semiconductor and Storage RN2310,LF

Product Details

Series

-

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Packaging

Tape & Reel (TR)

Current - Collector (Ic) (Max)

30mA

Part Status

Not For New Designs

Current - Collector Cutoff (Max)

500nA

Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

56 @ 5mA, 5V

Mounting Type

Surface Mount

Voltage - Collector Emitter Breakdown (Max)

50V

Package / Case

TO-236-3, SC-59, SOT-23-3

Transistor Type

NPN - Pre-Biased

Base Part Number

DTC124

Resistor - Base (R1)

22 kOhms

Frequency - Transition

250MHz

Supplier Device Package

SMT3

Resistor - Emitter Base (R2)

22 kOhms