Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage RN2707JE(TE85L,F)
TRANS 2PNP PREBIAS 0.1W ESV
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 3500
Product Details
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 500nA, 100µA
- Power - Max
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 20 @ 5mA, 10V / 210 @ 2mA, 10V
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- SOT-23-6
- Transistor Type
- 1 PNP Pre-Biased, 1 NPN
- Base Part Number
- DMG21401
- Resistor - Base (R1)
- -
- Frequency - Transition
- 150MHz
- Supplier Device Package
- Mini6-G4-B
- Resistor - Emitter Base (R2)
- 4.7kOhms
- Series
- -
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 500µA, 10mA / 300mV @ 10mA, 100mA
- Packaging
- Cut Tape (CT)
- Current - Collector (Ic) (Max)
- 100mA