Toshiba Semiconductor and Storage SSM3J15FV,L3F

Product Details

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

15pF @ 10V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Part Status

Active

Mounting Type

Surface Mount

Package / Case

SOT-723

Vgs(th) (Max) @ Id

1V @ 100µA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

3.8Ohm @ 100mA, 4.5V

Series

-

Power Dissipation (Max)

150mW (Ta)

FET Type

P-Channel

Supplier Device Package

VMT3

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

20V