Toshiba Semiconductor and Storage SSM3J328R,LF

Product Details

Vgs (Max)

+10V, -20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

330pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Mounting Type

Surface Mount

Package / Case

SOT-23-3 Flat Leads

Vgs(th) (Max) @ Id

2V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

300mOhm @ 1A, 10V

Series

U-MOSVI

Power Dissipation (Max)

1W (Ta)

FET Type

P-Channel

Supplier Device Package

SOT-23F

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 10V