Toshiba Semiconductor and Storage SSM3J355R,LF

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

97mOhm @ 3A, 4.5V

Series

-

Power Dissipation (Max)

1.4W (Ta)

FET Type

P-Channel

Supplier Device Package

SOT-23-3L

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V