Toshiba Semiconductor and Storage SSM3J356R,LF

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

140mOhm @ 1.5A, 4.5V

Series

OptiMOS™

Power Dissipation (Max)

500mW (Ta)

FET Type

N-Channel

Supplier Device Package

SOT-23-3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

0.8nC @ 5V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

143pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

1.2V @ 3.7µA