Toshiba Semiconductor and Storage SSM3K17FU,LF

Product Details

Vgs(th) (Max) @ Id

1.3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

4Ohm @ 200mA, 4.5V

Series

-

Power Dissipation (Max)

302mW (Ta)

FET Type

N-Channel

Supplier Device Package

TO-236AB

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

0.5nC @ 4.5V

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

55V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 30V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

210mA (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3