Toshiba Semiconductor and Storage SSM3K2615R,LF

Product Details

FET Type

P-Channel

Supplier Device Package

SOT-23-3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

206pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1.4A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

210mOhm @ 1.4A, 10V

Series

-

Power Dissipation (Max)

625mW (Ta)