Toshiba Semiconductor and Storage SSM3K56MFV,L3F

Product Details

FET Type

N-Channel

Supplier Device Package

SC-59

Packaging

Cut Tape (CT)

Drain to Source Voltage (Vdss)

20V

Vgs (Max)

10V

Input Capacitance (Ciss) (Max) @ Vds

5.5pF @ 3V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

50mA (Ta)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

2.5V

Part Status

Active

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

1.5V @ 100µA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

40Ohm @ 10mA, 2.5V

Series

-

Power Dissipation (Max)

200mW (Ta)