Toshiba Semiconductor and Storage SSM6J511NU,LF

Product Details

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

560pF @ 24V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

SOT-23-6

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

25mOhm @ 7A, 10V

Series

-

Power Dissipation (Max)

500mW (Ta)

FET Type

N-Channel

Supplier Device Package

6-TSOP