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Toshiba Semiconductor and Storage SSM6N15AFU,LF

MOSFET 2N-CH 30V 0.1A 2-2J1C

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0.06
Stock
12000

Product Details

Mounting Type
Chassis Mount
Package / Case
Module
Vgs(th) (Max) @ Id
2.3V @ 2.5mA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
34mOhm @ 50A, 20V
Supplier Device Package
Module
Series
Z-FET™ Z-Rec™
Gate Charge (Qg) (Max) @ Vgs
180nC @ 20V
FET Type
6 N-Channel (3-Phase Bridge)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Packaging
Bulk
Input Capacitance (Ciss) (Max) @ Vds
2.810nF @ 800V
FET Feature
Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C
87A (Tc)
Part Status
Active
Power - Max
337W