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Toshiba Semiconductor and Storage SSM6N16FUTE85LF

MOSFET 2N-CH 20V 0.1A US6

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
5570

Product Details

Series
-
Gate Charge (Qg) (Max) @ Vgs
-
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
50V
Packaging
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
7pF @ 3V
FET Feature
Standard
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)
Part Status
Active
Power - Max
200mW (Ta)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ Id
1.5V @ 1µA
Operating Temperature
150°C
Rds On (Max) @ Id, Vgs
20Ohm @ 10mA, 4V
Supplier Device Package
US6