Toshiba Semiconductor and Storage SSM6N815R,LF

Product Details

Supplier Device Package

SOT-563

Series

-

Gate Charge (Qg) (Max) @ Vgs

0.76nC @ 4.5V

FET Type

2 N-Channel (Dual)

Drain to Source Voltage (Vdss)

50V

Packaging

Tape & Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

Standard

Current - Continuous Drain (Id) @ 25°C

280mA

Part Status

Active

Power - Max

350mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Vgs(th) (Max) @ Id

1.2V @ 250µA

Operating Temperature

-65°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.5Ohm @ 50mA, 5V