Toshiba Semiconductor and Storage SSM6P35FE,LM

Product Details

Supplier Device Package

8-SOIC

Series

-

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

FET Type

N and P-Channel Complementary

Drain to Source Voltage (Vdss)

30V

Packaging

Tape & Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 15V

FET Feature

Standard

Current - Continuous Drain (Id) @ 25°C

6A

Part Status

Obsolete

Power - Max

2W

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

2.4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

30mOhm @ 6A, 10V