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Toshiba Semiconductor and Storage SSM6P35FE(TE85L,F)
MOSFET 2P-CH 20V 0.1A ES6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- -
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 60V
- Packaging
- Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds
- 50pF @ 25V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 280mA
- Part Status
- Obsolete
- Power - Max
- 150mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7.5Ohm @ 50mA, 5V
- Supplier Device Package
- SOT-563