Toshiba Semiconductor and Storage T2N7002AK,LM

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

53A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Chassis Mount

Package / Case

SOT-227-4, miniBLOC

Vgs(th) (Max) @ Id

5V @ 8mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

140mOhm @ 30A, 10V

Series

PolarHV™

Power Dissipation (Max)

1040W (Tc)

FET Type

N-Channel

Supplier Device Package

SOT-227B

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

800V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

18000pF @ 25V