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Transphorm TPH3202LS
GANFET N-CH 600V 9A PQFN
- Manufacturer
- Transphorm
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4.2mOhm @ 75A, 10V
- Power Dissipation (Max)
- 230W (Tc)
- Series
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs
- 120nC @ 10V
- FET Type
- N-Channel
- Drain to Source Voltage (Vdss)
- 60V
- Packaging
- Tube
- Input Capacitance (Ciss) (Max) @ Vds
- 4520pF @ 50V
- Vgs (Max)
- ±20V
- Current - Continuous Drain (Id) @ 25°C
- 160A (Tc)
- Technology
- MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Vgs(th) (Max) @ Id
- 4V @ 150µA