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Vishay / Semiconductor - Diodes Division BYG10M-E3/TR3
DIODE AVALANCHE 1KV 1.5A
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 0
- Stock
- 5820
Product Details
- Supplier Device Package
- DFN1006D-2
- Reverse Recovery Time (trr)
- 4.5ns
- Current - Reverse Leakage @ Vr
- 100µA @ 60V
- Voltage - DC Reverse (Vr) (Max)
- 60V
- Speed
- Small Signal =< 200mA (Io), Any Speed
- Current - Average Rectified (Io)
- 200mA
- Series
- -
- Operating Temperature - Junction
- 150°C (Max)
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 600mV @ 200mA
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 2-XDFN
- Capacitance @ Vr, F
- 20pF @ 1V, 1MHz