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Vishay / Semiconductor - Diodes Division VS-GT400TH120N
IGBT 1200V 600A 2119W DIAP
- Manufacturer
- Vishay / Semiconductor - Diodes Division
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Part Status
- Obsolete
- Voltage - Collector Emitter Breakdown (Max)
- 1200V
- Power - Max
- 2344W
- Configuration
- Half Bridge
- Mounting Type
- Chassis Mount
- NTC Thermistor
- No
- Package / Case
- Double INT-A-PAK (3 + 8)
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Supplier Device Package
- Double INT-A-PAK
- Vce(on) (Max) @ Vge, Ic
- 2.35V @ 15V, 400A
- Input
- Standard
- Current - Collector (Ic) (Max)
- 750A
- Series
- -
- Input Capacitance (Cies) @ Vce
- 51.2nF @ 30V
- IGBT Type
- Trench
- Current - Collector Cutoff (Max)
- 5mA