Vishay / Siliconix 2N7002-T1-E3

Product Details

FET Type

P-Channel

Supplier Device Package

4-AlphaDFN (1.57x1.57)

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1327pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Mounting Type

Surface Mount

Package / Case

4-SMD, No Lead

Vgs(th) (Max) @ Id

1.3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

41mOhm @ 1.5A, 10V

Series

-

Power Dissipation (Max)

550mW (Ta)