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Vishay / Siliconix IRC640PBF
MOSFET N-CH 200V 18A TO-220-5
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 200V 18A TO-220-5
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8mOhm @ 62A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 2.4W (Ta), 167W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D2PAK
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 68nC @ 4.5V
- Vgs (Max)
- ±16V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3445pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 104A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V