Vishay / Siliconix IRFB11N50APBF

Product Details

Rds On (Max) @ Id, Vgs

3.7mOhm @ 25A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

300W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220AB

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

95.6nC @ 5V

Vgs (Max)

±15V

Drain to Source Voltage (Vdss)

55V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

7665pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

2V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)