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Vishay / Siliconix IRFBC20LPBF
MOSFET N-CH 600V 2.2A TO-262
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 600V 2.2A TO-262
Product Details
- Rds On (Max) @ Id, Vgs
- 450mOhm @ 4.9A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 74W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220-5
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 41nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 250V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 770pF @ 25V
- FET Feature
- Current Sensing
- Current - Continuous Drain (Id) @ 25°C
- 8.1A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-5
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)