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Vishay / Siliconix IRFBC30ASTRRPBF

MOSFET N-CH 600V 3.6A D2PAK

Manufacturer
Vishay / Siliconix
Datasheet
Price
0
Stock
100
Description
MOSFET N-CH 600V 3.6A D2PAK

Product Details

Series
-
Supplier Device Package
4-DIP, Hexdip, HVMDIP
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Packaging
Tube
Drain to Source Voltage (Vdss)
100V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
390pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-
Rds On (Max) @ Id, Vgs
600mOhm @ 600mA, 10V
Power Dissipation (Max)
-