Images are for reference only. See Product Specifications for product details
Vishay / Siliconix IRFBE30LPBF
MOSFET N-CH 800V 4.1A TO-262
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 2.71
- Stock
- 865
- Description
- MOSFET N-CH 800V 4.1A TO-262
Product Details
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 3.5V @ 690µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 250mOhm @ 6.9A, 10V
- Series
- DTMOSIV
- Power Dissipation (Max)
- 40W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220SIS
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 35nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1300pF @ 300V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 13.7A (Ta)