Images are for reference only. See Product Specifications for product details
Vishay / Siliconix IRFD120PBF
MOSFET N-CH 100V 1.3A 4-DIP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.88
- Stock
- 1334
- Description
- MOSFET N-CH 100V 1.3A 4-DIP
Product Details
- Series
- Automotive, AEC-Q101, TrenchMOS™
- Power Dissipation (Max)
- 253W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D2PAK
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 92nC @ 5V
- Vgs (Max)
- ±15V
- Drain to Source Voltage (Vdss)
- 55V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 6021pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 75A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7.5mOhm @ 25A, 10V