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Vishay / Siliconix IRFD123PBF
MOSFET N-CH 100V 1.3A 4-DIP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 100V 1.3A 4-DIP
Product Details
- Rds On (Max) @ Id, Vgs
- 15.4mOhm @ 9A, 10V
- Series
- -
- Power Dissipation (Max)
- 650mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 8-SOP
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 30nC @ 5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3000pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9A (Ta)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- 150°C (TJ)