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Vishay / Siliconix IRFD210
MOSFET N-CH 200V 600MA 4-DIP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 200V 600MA 4-DIP
Product Details
- Vgs(th) (Max) @ Id
- 1.3V @ 1mA
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4Ohm @ 500mA, 4.5V
- Series
- TrenchMOS™
- Power Dissipation (Max)
- 830mW (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-236AB
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 1nC @ 8V
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 55V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 40pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 335mA (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3