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Vishay / Siliconix IRFD210PBF
MOSFET N-CH 200V 600MA 4-DIP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.96
- Stock
- 4833
- Description
- MOSFET N-CH 200V 600MA 4-DIP
Product Details
- Series
- QFET®
- Power Dissipation (Max)
- 2.5W (Ta), 45W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- I-PAK
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 13nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 400V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 460pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3.4A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.6Ohm @ 1.7A, 10V