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Vishay / Siliconix IRFD224PBF
MOSFET N-CH 250V 630MA 4-DIP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 1.42
- Stock
- 2500
- Description
- MOSFET N-CH 250V 630MA 4-DIP
Product Details
- Series
- -
- Power Dissipation (Max)
- 50W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- ITO-220
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 24.5nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 500V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1116pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Vgs(th) (Max) @ Id
- 3.8V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 900mOhm @ 2.3A, 10V