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Vishay / Siliconix IRFIB5N65APBF
MOSFET N-CH 650V 5.1A TO220FP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 3.6
- Stock
- 250
- Description
- MOSFET N-CH 650V 5.1A TO220FP
Product Details
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 28mOhm @ 35A, 10V
- Series
- QFET®
- Power Dissipation (Max)
- 330W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-3PN
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 175nC @ 10V
- Vgs (Max)
- ±25V
- Drain to Source Voltage (Vdss)
- 150V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5400pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 70A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3